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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3842
DESCRIPTION With TO-3PML package High voltage ,high speed High current capability APPLICATIONS For use in TV horizontal output and Power switching applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER

CHA IN
Collector current Collector dissipation
Collector-base voltage
E SEM NG
Open emitter Open base Open collector
CONDITIONS
OND IC
TOR UC
MAX 600 400 6 10 UNIT V V V A W ae ae
Collector-emitter voltage
Emitter-base voltage
TC=25ae
70 150 -55~150
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SC3842
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
600
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=500V ;IE=0
100
|I
A
IEBO
Emitter cut-off current
hFE
fT
IN
DC current gain

VEB=5V; IC=0
Transition frequency
COB
Output capacitance
ANG CH
MIC E SE
IC=1A ; VCE=10V
IC=5A ; VCE=5V
DUC ON
10
TOR
100 |I 40 32
A
MHz
IE=0 ; VCB=10V ;f=1MHz
100
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3842

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions
3


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